2n3055
BC550 Transistor
Photo Transistor
Transister 2N7000
2N7002 7002 60V 300mA 0.83W N-Channel Trench MOSFET SOT23-3 SMD Transistor
N-Channel MOSFET with low on-state resistance
Continuous Drain Current (ID) is 200mA
Drain Source Voltage (VDS) is 60V
On-state Resistance is <5Ω
Minimum Gate threshold voltage (VGS-th) is 1V
Maximum Gate threshold voltage (VGS-th) is 3V
Turn ON and Turn off time is 15ns and 8ns each
Transistor 2N2222
Transistor 2N3904
- 2N3904 1AM SOT-23 NPN Transistor SMD
- This is a very versatile, inexpensive transistor used in many applications. Perfect for the electronics hobbyist or device repair.
- Collector-Base Voltage: 60V
- Collector-Emitter Voltage: 40V
- Emitter-Base Voltage: 6V
- Collector Current: 200mA
- Mfr: ON Semiconductor
- Package: SOT-23
- DC Current gain: 100-300
- *Voltage and current dependent
Transistor 2N3906
Product Name : PNP Transistor;Model : 2N3906;Quantity : 50 2% Pcs
Collector Base Voltage : 40V;Collector Emitter Voltage : 40V;Emitter Base Voltage : 5V
Collector Current(Continuous) : 200mA;Collector Power Dissipation : 625mW;Pin Size : 14 x 0.5mm/ 0.551" x 0.019" ( L* D)
Body Dimension : 4 x 3 x 4mm/ 0.16" x 0.12" x 0.16" (L*W*T);Pitch : 1.5mm/0.059";Main Color : Black
Weight : 22g;
Descritpion: PNP type Bipolar Transistors with 3 pin for inserting into device.
Package: TO-92 .
Transistor 2N5401
MMBT5401 2L SOT23-3 2N5401 SMD PNP high voltage transistor
Type Designator: GSTMMBT5401
SMD Transistor Code: 2L
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.225 W
Maximum Collector-Base Voltage |Vcb|: 160 V
Maximum Collector-Emitter Voltage |Vce|: 150 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 6 pF
Forward Current Transfer Ratio (hFE), MIN: 60
Transistor 2N5551 ₨ 3
Transistor A733
- Transistor Type: PNP (Positive-Negative-Positive)
- Maximum Collector-Base Voltage (Vcbo): 50V
- Maximum Collector-Emitter Voltage (Vceo): 20V
- Maximum Emitter-Base Voltage (Vebo): 5V
- Maximum Collector Current (Ic): 500mA
- Maximum Power Dissipation (Pd): 625mW
- DC Current Gain (hfe): Typically around 40-400
Transistor BC 547
- Category: Discrete Semiconductor Products
- Family: Transistors (BJT) – Single
- Transistor Type: NPN
- Current – Collector (Ic) (Max): 100mA
- Voltage – Collector Emitter Breakdown (Max): 45V
- Vce Saturation (Max) @ Ib Ic 600mV @ 5mA 100mA
- Current – Collector Cutoff (Max) DC Current Gain (hFE) (Min) @ Ic Vce 200 @ 2mA 5V
- Power – Max 500mW
- Frequency – Transition 300MHz
- Mounting Type: Through Hole
- Package / Case TO-226-3 TO-92-3 (TO-226AA) Formed Leads
- Supplier Device Package TO-92-
